Rapid Thermal Processing for Future Semiconductor Devices - H. Fukuda
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This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously ... Pilns apraksts
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Aprašymas
This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.
Vairāk informācijas
| Autors | H. Fukuda |
|---|---|
| Izdevējs | Elsevier Science |
| Izlaides gads | 2003 |
| Vāka tips | Mīkstais vāks |
| EAN | 9780444513397 |