Nanometer CMOS - Frank Schwierz,Hei Wong,Juin J. Liou
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Providing a comprehensive overview of all the important issues concerning modern Si MOSFETs, this examination covers the principles of MOSFET operation, theory, and scaling issues, as well as offering an in-depth discussion of nanometer MOSFETs. Both classical nanometer MOSFETs as well as non-classical MOSFET concepts, which receive little coverage in textbooks, are treated in detail. The device structures, ... Pilns apraksts
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Aprašymas
Providing a comprehensive overview of all the important issues concerning modern Si MOSFETs, this examination covers the principles of MOSFET operation, theory, and scaling issues, as well as offering an in-depth discussion of nanometer MOSFETs. Both classical nanometer MOSFETs as well as non-classical MOSFET concepts, which receive little coverage in textbooks, are treated in detail. The device structures, merits, and drawbacks of MOSFET concepts like strained Si MOSFETs, ultra-thin body SOI MOSFETs, and multiple gate MOSFETs (FinFETs, Tri-gate MOSFETs) are presented. An entire chapter is devoted to the emerging and rapidly growing field of RF MOSFETs/RF CMOS, and the discussion extends to the important future trends in of nanometer CMOS technology and the problems and limits of scaling.
Vairāk informācijas
| Autors | Frank Schwierz, Hei Wong, Juin J. Liou |
|---|---|
| Izdevējs | Jenny Stanford Publishing |
| Izlaides gads | 2010 |
| Vāka tips | Cietais vāks |
| EAN | 9789814241083 |