Doping Engineering for Front-End Processing -
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Piegāde 17-23 darba dienu laikā
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Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate d ... Pilns apraksts
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| Izdevējs | Cambridge University Press |
|---|---|
| Izlaides gads | 2008 |
| Vāka tips | Cietais vāks |
| EAN | 9781605110400 |