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Doping Engineering for Front-End Processing -

angļu valoda
2008-10-17
138,51 € 197,87 €

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Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate d ... Pilns apraksts

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Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.

Vairāk informācijas

Izdevējs Cambridge University Press
Izlaides gads 2008
Vāka tips Cietais vāks
EAN 9781605110400
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138,51 € 197,87 €